INGAN BASED LIGHT EMITTING DIODE AND LASER DIODE THE PRESENT AND THE FUTURE

Authors

  • Nasser N.Morgan
  • Ye Zhizhen

Keywords:

jmoe

Abstract

The III-nitrides AlN, GaN and InN with related alloys form an interesting class of wide bandgap materials, which are likely to be the basis of a strong development of a novel family of semiconductor devices, LED and LD. The entire spectral region from green to UV can be covered InGaN which, represent the main active layer for III-N based LEDs and LDs. In addition to that InGaN band gap contains localized states that contribute as radiative recombination centers and prevent capiture of the electrons and holes by nonradiative recombination centers associated with threading dislocation. The aim of this paper is to review the recent progress in InGaN based LED and LD.

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Published

2002-05-05

How to Cite

Nasser N.Morgan, & Ye Zhizhen. (2002). INGAN BASED LIGHT EMITTING DIODE AND LASER DIODE THE PRESENT AND THE FUTURE. Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 2(5), 52-59. Retrieved from http://www.jmoe.org/index.php/jmoe/article/view/78

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Section

Regular Papers