MODELLING OF A BISTABLE CURRENT SWITCH IN ELECTRON WAVEGUIDES
Keywords:Electron waveguide, Quantum well, Transfer length, Transfer coefficient
In this paper, we report modelling of a bistable current switch in coupled electron waveguides. The variation of the coupling parameters under weak and strong coupling conditions is presented. The dependence of the switching parameters on the mole fractionÂ xÂ is shown forÂ GaAs/Ga1-xAlxAs. Since the effective mass of the electron,Â me, is controlled through the alloy compositionxÂ in the semiconductor heterostructureÂ GaAs/Ga1-xAlxAs, transfer length of coupled electron waveguides for the electron wave packet initially injected into this device through one of the waveguides, is obtained at different gate voltages.
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