MODELLING OF A BISTABLE CURRENT SWITCH IN ELECTRON WAVEGUIDES

Keywords:

Electron waveguide, Quantum well, Transfer length, Transfer coefficient

Abstract

In this paper, we report modelling of a bistable current switch in coupled electron waveguides. The variation of the coupling parameters under weak and strong coupling conditions is presented. The dependence of the switching parameters on the mole fraction x is shown for GaAs/Ga1-xAlxAs. Since the effective mass of the electron, me, is controlled through the alloy compositionx in the semiconductor heterostructure GaAs/Ga1-xAlxAs, transfer length of coupled electron waveguides for the electron wave packet initially injected into this device through one of the waveguides, is obtained at different gate voltages.

References

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Published

2002-05-05

How to Cite

MODELLING OF A BISTABLE CURRENT SWITCH IN ELECTRON WAVEGUIDES. (2002). Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 2(5), 45-51. Retrieved from http://www.jmoe.org/index.php/jmoe/article/view/77

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Regular Papers