SELECTION OF PRECURSORS AND THEIR INFLUENCES ON III-NITRIDES GROWN BY MOCVD

Authors

  • Gu Xing
  • Ye Zhi Zhen

Keywords:

precursor, III-nitrides, GaN, MOCVD, TMGa, TEGa

Abstract

Selection of precursors exerts significant influences on the III-nitrides thin films grown by MOCVD. The common and novel precursors of group III, nitrogen, n-doping and p-doping which are used in the growth of III-nitrides are presented and their characteristic are discussed. Some major precursors that have distinctive effects to the sample's properties, such as TMGa and TEGa, are compared in details.

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Published

2002-05-05

How to Cite

Gu Xing, & Ye Zhi Zhen. (2002). SELECTION OF PRECURSORS AND THEIR INFLUENCES ON III-NITRIDES GROWN BY MOCVD. Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 2(5), 1-16. Retrieved from http://www.jmoe.org/index.php/jmoe/article/view/72

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