• Guillermo Rafael-Valdivia
  • Omar Castellanos Ballesteros



microwaves, modeling, substrate, power amplifier


This paper presents a new methodology for modeling, design and implementation of power amplifiers in different technologies. As result of the comparison, a flowchart with a new methodology is proposed, which can be useful for the designer to design and implement power amplifiers with low, medium and high power devices in different technologies. This paper is divided in 4 parts: The first one is an introduction of the importance of modeling and design techniques in the final implementation of power amplifiers for the modern communication systems. The second one details the modeling process for different technologies, which final result is a unified model. The third part is related with the characterization of high power transistors, with special emphasize on substrate characterization and  final implementation of a power amplifier. Finally, in the fourth part, the new methodology is proposed based on the comparisons of the previous procedures.


[1] Lan and al., “High power density InGaP PHEMTs for 26V operation”, 2005 IEEE RFIC Symp. Digest.
[2] GaN HEMT equivalent circuit model with novel approach to dispersion modelling. Justin B. King; Thomas J. Brazil.
2012 7th European Microwave Integrated Circuit Conferenc
[3] Parker1 A. E. Parker, and J.G. Rathmell, “Bias and frequency dependence of FET characteristics,” IEEE Trans.
Microwave Theory and Tech., vol. 51, no.2, pp. 558-592, December 1997
[4] Single function drain current model for MESFET/HEMT devices including pulsed dynamic behavior. Guillermo
Rafael-Valdivia; Ronan Brady; Thomas J. Brazil. 2006 IEEE MTT-S International Microwave Symposium Digest
[5] IMOC Nonlinear device model for GaN and GaAs microwave transistors including memory effects. G. RafaelValdivia, Anthony Urquizo, Thalia Mendoza. Silvio E. Barbin 2015 SBMO/IEEE MTT-S International Microwave and
Optoelectronics Conference (IMOC)
[6] Improved prediction of the intermodulation distortion characteristics of MESFETs and PHEMTs via a robust nonlinear
device model. V. I. Cojocaru; T. J. Brazil.1998 IEEE MTT-S International Microwave Symposium Digest
[7] Basque Country University. Physics of Materials Department. "Impedancia. Permitividad eléctrica". Available:
[8] JMOE Non-resonant permittivity measurement methods. Sergio L. S. Severo, Álvaro A. A. de Salles; Bruno Nervis,
Braian K. Zanini. Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol. 16, No. 1, March
[9] "FR4" Available:
[10] Chen Wang, "Determining Dielectric Constant and Loss tangent in FR-4", UMR EMC. Laboratory technical report:
TR00-1-041,. March (2000). Available:
[11] RF35. Available:
[12] Datasheet. Available:\mrf6s18100n_549062.pdf
[13] J.M. Coupat and al., “True pulse load pull measurement setup for high power transistors characterization”, 2006
ARFTG Conference.
[14] “A 3.5 GHz 25 W Silicon LDMOS RFIC power amplifier for WiMAX applications” C. Cassan, P. Gola Freescale
Semiconductors, inc., RF division RFIC Honolulu June 3th-5th 2007 International Microwave Symposium.




How to Cite

Guillermo Rafael-Valdivia, & Omar Castellanos Ballesteros. (2017). NEW METHODOLOGY FOR MODELING, DESIGN AND IMPLEMENTATION OF RF POWER AMPLIFIERS. Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 16(3), 785–800.



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