• Nasser N.M
  • Ye Zhi zhen
  • Li Jiawei
  • Xu Ya bou




Recently GaN and its alloys have an interesting application due to their direct and wide band gap energy. The growth and successful doping of high quality GaN single crystal have led to optoelectronic devices from blue to near UV region, as well as devices for high power and high temperature electronics. The aim of this paper is to review the different growth techniques used for GaN epitaxial growth, including HVPE, MOCVD, MBE and their recent modifications.


H. Chung, and C.Wang. Annual report (1999), Dept. of optoelectronics, University of Ulm

R.J.Molnar, W.Gotz, L.T.Romano and N.M. Johnson J. Crystal Growth 178 (1997) 147

R. Fornari *, M. Bosi, N. Armani, G. Attolini, C. Ferrari, C. Pelosi, G. Salviati, Material Science and Engineering B79 (2001) 159-164

R.J.Malik "III-V Semiconductor Materials and devices`` north-Holand, 1989

S.C.Jian et al., J.Appl.Phys. 87(3)(2000) 965

S.Nakamura, et al., J. Appl. Phys. Lett., 58 (1991) 2021

H.Amano, I.Akasaki et al Appl. Phys. lett. 48 353 (1986)

S.Nakamura Jpn. J. appl. Phys. 30 L1705 (1991)

S.Nakamura and T.mukai Jpn. J. Appl. Phys., 31 (1992) L1457

H.Amano et al.,Thin Soild films 163 (1988) 415

H.Tanaka IEICE Trans. Electron., Vol. E83-C no.4 April(2000)

S.Nakamura, M.Senoh , N.Iwasa and S.Nagahama, Jpn. J. appl. Phys. 34 (1995) L797

T. Mukai, D. Morita, S. Nakamura Journal of Crystal Growth 189/190 (1998) 778

W. S. Wong , T. Sands,N. W. Cheung et al., Appl. Phys. Lett. 75(10) (1999) 1360

S.Nakamura IEICE Trans. Electron, Vol. E83-C no.4 April (2000) 529

S.Nakamura Journal of Crystal Growth 201/202 (1999) 290

S.Nakamura Material Science and Engineering B 50 (1997) 277

M.Kuramoto IEICE Trans. Electron, Vol. E83-C no.4 April (2000) 552

S.Strite et al J.Vac. Sci. Technol. B10(4)(1992)

A. Rinta-Moykky et al.,Phys. Stat. Sol. (a)176 (1999) 465

Markus Kamp , M. Mayer, A. Pelzmann, K. J. Ebeling MRS Internet J Nitride Semicond. Res. 2 art. 26 (1997)

H.M. Ng, D. Doppalapudi, D. Korakakis, R. Singh, T.D. Moustakas J. Crystal Growth 189/190 (1998) 349

A.Krtschil et al., phys. Stat. Sol. (b) 216 (1999) 587

B. Damilano ) , N. Grandjean, J. Massies, F. Semond Appl. Surface Science 164(2000) 241

B. Daudin et al., diamond and Related Materials 9 (2000) 506

R.D.Dupuis Journal of Crystal Growth 178 (1997) 56

Daniel Steigerwald, Serge Rudaz, Heng Liu, R. Scott Kern, Werner Götz, and Robert Fletcher JOM,49 (9) (1997) 18-23

A.Watanabe, T.Takueuchi, K.Hirosawa, H.Amaon, K.Hiramatsu and I.Akasaki Journal of Crystal Growth 128 (1993) 391-396

H.X. Wang, T. Wang ,S. Mahanty, F. Komatsu, T. Inaoka , K. Nishino, S. Sakai Journal of Crystal Growth 218 (2000) 148

T. J. Kistenmacher, D. K. Wickenden, and J. Miragliotta, Journal of Applied Physics 75 (1994), 7585

S. Nakamura, T.Mukai, and M. Senoh Jpn. J. Appl. Phys., 31 (1992), p. 2883.

W. Götz et al., Electrochem. Soc. Proc., 96-11 (1996), p. 87.

W.Gotz,N.M.Johnson, C.Chen, H.Liu, C.Kuo and W.Imler Appl. Phys.Lett 68(22)(1996) 3144

K. S. kim, G.M.Yang, H.J.Lee Solid State Electronics 43(1999) 1807

S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., 30 (1991), p. L1708

G.C. Chi, C.H. Kuo, J.K. Sheu, C.J. Pan Material Science and Engineering B75 (2000) 210

W. Gotz, N.M. Johnson, J. Walker, D.P. Bour, H. Amano, I. Akasaki, Appl. Phys. Lett. 67 (1995) 2606.

H. Amano, I. Akasaki, et al., Jpn. J. Appl. Phys. 28 (1989) L2112

S. Nakamura et al., Jpn. J. Appl. Phys., 31 (1992) L139

P.Kung and M.Razechi Optoelecronics Review 8(3) (2000) 201-239

C.R. Abernathy, J.D. Mackenzie, S.M. Donovan J. Crystal Growth 178 (1997) 74-86

T.Lei et al., J.Appl.Phys. 71(10), 4933, 1992

Y. Hiroyamaa et al., Jpn J. appl.Phys.37 L630 1998




How to Cite

Nasser N.M, Ye Zhi zhen, Li Jiawei, & Xu Ya bou. (2001). GAN HETEROEPTAXIAL GROWTH TECHNIQUES. Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 2(3), 22–31. Retrieved from



Regular Papers

Similar Articles

You may also start an advanced similarity search for this article.