• Alberto Leggieri
  • Davide Passi
  • Daniele Gagliesi
  • Franco Di Paolo



Active Polyphase Filter, Tunable Polyphase Filter, monolithic, excitation mode, image reject receiver


This paper proposes a new topology of a 2-Stages Active Polyphase Filter (APPF) in MMIC GaAs technology. This new topology, named "radial``, allows a greater balancing of output signals phases and amplitudes, over the actual APPF's at the state of the art. In this paper an ex-novo study is shown and synthesis formulas for the APPF are provided. The MMIC simulations in 1- 5GHz bandwidth show a tunable Image Rejection Ratio (IRR) greater than 40dB, a worst case input/output matching of 7.8dB and a maximum insertion loss of 10.8dB. By comparison with the tandem topology, as will be shown in the following, the radial one allows a significant improvement in the electrical performances.


[1] S. Maas: "Microwave Mixers", Artech House, Second Edition, 1993
[2] A.A. Abidi: "Direct-Conversion Radio Transceivers for Digital Communications", IEEE Journal of SSC, Vol. 30, N.12, Dec. 1995, p:
[3] Markus Ortner, H.P. Forstner, Ludger Verweyen and Timm Ostermann “A Fully Integrated Homodyne Downconverter MMIC in
SiGe:C for 60 GHz Wireless Applications”, IEEE SiRF, 2011.
[4] B. Schlecker, M. Ortmanns, J. Anders, G. Fartner: “Novel electronics for high-speed FM-AFM in life science applications”, European
Conference on Circuit Theory and Design, p. 1–4, 2013.
[5] Donald E. Noorgaard: “The Phase-Shift Method of Single-Sideband Signal Reception”, Proc. IRE, vol. 44, pp. 1735-1743, December
[6] M.J. Gingell: "Single Sideband Modulation using Sequence Asymmetric Polyphase Networks", Electrical Communication, Vol 48,
n.1,2, 1973, p: 21-25.
[7] Jouni Kaukovuori, Kari Stadius, Jussy Ryynänen and Kari A. I. Halonen: “Analysis and Design of Passive polyphase Filters”, IEEE
Transactions on Circuits and Systems, vol. 55, NO. 10, pp. 3023-3037, November 2008.
[8] F. Behbahani, Y. Kishigami, J. Leet, A.A. Abidi: "CMOS Mixer and Polyphase Filters for Large Image Rejection", IEEE Journals of
SSC, Vol. 3, N.6, June 2001, p: 873-886
[9] T. Hornak: "Using Polyphase Filters as Image Attenuators", RF Design, June 2001, p: 26-34
[10] Yang Jiao, Zhizhong Huang, Li, L: "CMOS analog polyphase filters for use in bluetooth systems", 9th International Conference on
Solid-State and Integrated-Circuit Technology, 2008, p:1677-1680
[11] H. Erkens, R. Wunderlich, S. Heinen: “A Low-Cost, High Resolution, 360° Phase/Gain Shifter in SiGe BiCMOS”, IEEE Topical
Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009, p:1-4
[12] F. Haddad, W. Rahajandraibe, L Zaid, O. Frioui and R. Bouchakour “Radio Frequency Tunable Polyphase Filter Design”, 16th IEEE
International Conference on Electronics, Circuits, and Systems, 2009, p:21-24
[13] M. Kaltiokallio, J. Ryynnen: "A 1 to 5GHz adjustable active polyphase filter for LO quadrature generation", IEEE Radio Frequency
Integrated Circuits Symposium (RFIC), 2011, p:1- 4
[14] G. Souliotis, F. Plessas, F. Liakou & M. Birbas “A 90 nm CMOS 15/60 GHz frequency quadrupler”, International Journal of
Electronics, Volume 100, Issue 11, 2013, pages 1529-1545.
[15] E. Cohen, “Microwave GaAs FETs: Reliability and reproducibility”, IEEE International Solid-State Circuits Conference, 18-20 Feb.
1976, Philadelphia, USA, p. 174.
[16] R. E. Lundgren, G. O. Ladd, “Reliability Study of Microwave GaAs Field-Effect Transistors”,16th Annual Reliability Physics
Symposium, 1978. San Diego, USA, pp. 255 – 260.
[17] J. Magarshack, “Microwave Integrated Circuits on GaAs”, 12th European Microwave Conference, Helsinki, Finland , 13-17 Sept.
1982, pp. 5 - 15.
[18] B.K. Schwitter, A. E. Parker, A. P. Fattorini, S. J. Mahon, M. C. Heimlich, “Study of Gate Junction Temperature in GaAs pHEMTs
Using Gate Metal Resistance Thermometry”, IEEE Transactions on Electron Devices, Vol. 60 , Issue 10, IEEE, 2013, pp.3358 –
[19] S. E. Gunnarsson, C. Karnfelt, H. Zirath, R. Kozhuharov, D. Kuylenstierna, C. Fager, A. Alping, “Single-Chip 60 GHz Transmitter
and Receiver MMICs in a GaAs mHEMT Technology”, IEEE MTT-S International Microwave Symposium Digest, 11-16 June 2006,
San Francisco, CA, pp. 801 – 804.
[20] C. Zhe, S. Rea,W. Hui, B. Alderman, Z. Bo, F. Yong, “A power combined amplifier module in W-band”, 6th UK Europe, China
Millimeter Waves and THz Technology Workshop (UCMMT), 2013, 9-11 Sept. 2013, Rome, Italy, p.1.
[21] J. J. Komiak, P. M. Smith, K. H. G. Duh, K.H.G. ; D. Xu, P. C. Chao, “Metamorphic HEMT Technology for Microwave, MillimeterWave, and Submillimeter-Wave Applications“, IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 13-16 Oct.
2013, Monterey, CA, pp. 1-4.
[22] J. Würfl, “Recent advances in GaAs devices for use at high temperatures”, High-Temperature Electronic Materials, Devices and
Sensors Conference, 22-27 Feb 1998, San Diego, CA, pp. 106 – 116.
[23] R. Narasimhan, L. P. Sadwick, R. J. Hwu, “Enhancement of high-temperature high-frequency performance of GaAs-based FETs by
the high-temperature electronic technique”, IEEE Transactions on Electron Devices , Vol. 46, Issue 1, pp. 24 – 31.
[24] L. Ji, C. Kuan-Jung, H. Hu, J. B. Bernstein, “Temperature dependence of Ron,sp in silicon carbide and GaAs Schottky diode”, proc.
of 40th Annual Reliability Physics Symposium Proceedings, IEEE, 2002, pp. 425 – 426.




How to Cite

Alberto Leggieri, Davide Passi, Daniele Gagliesi, & Franco Di Paolo. (2015). ANALYSIS AND DESIGN OF A GAAS MONOLITHIC TUNABLE POLYPHASE FILTER IN S/C BANDS. Journal of Microwaves, Optoelectronics and Electromagnetic Applications (JMOe), 14(1), 14–27.



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